San Jose, CA, United States of America

Daniel F LaBouve


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 7(Granted Patents)


Company Filing History:


Years Active: 1998-2000

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3 patents (USPTO):Explore Patents

Title: The Innovations of Daniel F LaBouve

Introduction

Daniel F LaBouve is a notable inventor based in San Jose, California. He has made significant contributions to the field of memory device technology, holding three patents that showcase his innovative approach to sense amplification.

Latest Patents

One of LaBouve's latest patents is titled "Sense Amplifying Methods and Sense Amplification Integrated Devices." This invention discloses a sense amplifier designed to amplify data signals read from memory devices. The sense amplifier features a core that includes an amplifier circuit and an output data latching circuit. The amplifier circuit is configured to voltage amplify the data signal, while the output data latching circuit is designed to latch the amplified data signal. Additionally, the sense amplifier incorporates a dummy sense amplifying core that generates a read enable signal to activate the output data latching circuit. The amplifier circuit is also designed to switch itself off through an internal feedback signal.

Another significant patent by LaBouve is "Low Power Consuming Memory Sense Amplifying Circuitry." This invention presents low power circuitry for amplifying sensed signals in memory devices. The circuitry includes an amplifier circuit that receives a data signal from a selected column of a memory array. It features a first pre-charger transistor to limit the data bus voltage swing and a virtual ground control line that manages the virtual ground application to the selected column. The virtual ground application provides a path to ground for the selected column, while a gain transistor amplifies the data signal for further processing.

Career Highlights

LaBouve is currently employed at Artisan Components, Inc., where he continues to develop innovative solutions in the field of memory technology. His work has significantly impacted the efficiency and performance of memory devices.

Collaborations

Throughout his career, LaBouve has collaborated with talented individuals such as Scott T Becker and Dhrumil Gandhi. These collaborations have fostered a creative environment that has led to groundbreaking advancements in technology.

Conclusion

Daniel F LaBouve is a distinguished inventor whose work in memory device technology has resulted in several impactful patents. His innovative contributions continue to shape the future of memory amplification and efficiency.

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