Wake Forest, NC, United States of America

Daniel E Moore

This inventor holds 3 USPTO granted patents and 2 published patent applications. Top assignee: International Business Machines Corporation. Active years: 2016-2021.

USPTO Granted Patents = 3 

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 2016-2021

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3 patents (USPTO):Explore Patents

Title: The Innovations of Daniel E Moore

Introduction

Daniel E Moore is a notable inventor based in Wake Forest, NC (US). He has made significant contributions to the field of technology, particularly in the area of non-volatile memory systems. With a total of 3 patents to his name, Moore's work has had a considerable impact on the industry.

Latest Patents

One of Moore's latest patents focuses on a computer-implemented method for sorting non-volatile random access memories (NVRAMS). This innovative method includes testing a failure metric for each of a plurality of NVRAMS over multiple testing sessions to capture failure metric data. The process involves determining a trend in the failure metric as a function of testing cycles for each NVRAM and separating them into groups based on this trend. A corresponding computer program product and computer system are also disclosed in this patent.

Career Highlights

Daniel E Moore is currently employed at International Business Machines Corporation, commonly known as IBM. His work at IBM has allowed him to explore and develop advanced technologies that enhance the performance and reliability of memory systems.

Collaborations

Moore has collaborated with several talented individuals in his field, including Jung H Yoon and Phillip E Christensen. These collaborations have contributed to the advancement of his research and innovations.

Conclusion

Daniel E Moore's contributions to the field of technology, particularly in non-volatile memory systems, showcase his innovative spirit and dedication to advancing the industry. His patents reflect a commitment to improving the efficiency and reliability of memory technologies.

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