Milton, VT, United States of America

Daniel D Reinhardt


Average Co-Inventor Count = 4.3

ph-index = 2

Forward Citations = 9(Granted Patents)


Location History:

  • Hinesburg, VT (US) (2008 - 2009)
  • Milton, VT (US) (2016 - 2019)

Company Filing History:


Years Active: 2008-2019

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5 patents (USPTO):Explore Patents

Title: Innovations of Daniel D Reinhardt

Introduction

Daniel D Reinhardt is a notable inventor based in Milton, Vermont, who has made significant contributions to the field of semiconductor technology. With a total of five patents to his name, Reinhardt has demonstrated a commitment to advancing the understanding and application of stress conditions in integrated circuit devices.

Latest Patents

One of Reinhardt's latest patents focuses on the application of stress conditions for homogenization of stress samples in semiconductor product acceleration studies. This innovative method involves partitioning integrated circuit device samples into distinct regions, each subjected to different stress conditions. By determining the functional failures of these samples based on the applied stress, Reinhardt's approach allows for the derivation of an acceleration model parameter, enhancing the reliability of semiconductor products.

Career Highlights

Reinhardt is currently employed at International Business Machines Corporation (IBM), where he continues to push the boundaries of semiconductor research. His work has been instrumental in improving the testing processes for integrated circuits, ensuring that they meet the rigorous demands of modern technology.

Collaborations

Throughout his career, Reinhardt has collaborated with esteemed colleagues such as Mark A Burns and Douglas S Dewey. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Daniel D Reinhardt's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work not only advances the understanding of stress conditions in integrated circuits but also enhances the overall reliability of semiconductor products.

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