Dan Ritter

Title: Dan Ritter - Innovator in Semiconductor Technology

Introduction

Dan Ritter is a prominent inventor based in Haifa, Israel. He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work focuses on enhancing the performance and reliability of electronic components.

Latest Patents

Ritter's latest patents include a high power bipolar transistor with an emitter current density limiter. This invention features a heterojunction bipolar transistor (HBT) designed to reduce current crowding effects and prevent thermal instabilities. The addition of a negative differential resistance (NDR) element, which can be implemented using a Resonant Tunnel Diode (RTD) or an Esaki Diode structure, is a key aspect of this innovation. The NDR element limits the tunneling current to ensure safe transistor operation.

Another notable patent is an optical apparatus and method for measuring the diffusion length in insulating photoconductors or semiconductor materials. This invention utilizes a source of coherent light and includes mechanisms for splitting the light into transmitted and reflected beams. By measuring changes in the periodic photocurrent in response to these beams, the diffusion length of the sample material can be accurately determined.

Career Highlights

Dan Ritter is associated with the Technion Research & Development Foundation Limited, where he continues to advance his research and development efforts. His work has been instrumental in pushing the boundaries of semiconductor technology.

Collaborations

Ritter has collaborated with notable colleagues such as Nachum Shamir and Kurt Weiser, contributing to various innovative projects in the field.

Conclusion

Dan Ritter's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the industry. His work continues to influence advancements in electronic components and their applications.