The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2002
Filed:
Jul. 10, 2000
Applicant:
Inventors:
Nachum Shamir, Haifa, IL;
Dan Ritter, Haifa, IL;
Assignee:
Technion Research & Development Foundation Ltd., Haifa, IL;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/906 ;
U.S. Cl.
CPC ...
H01L 2/906 ;
Abstract
A heterojunction bipolar transistor (HBT) having an emitter structure capable of reducing the current crowding effect and preventing thermal instabilities is disclosed, wherein a negative differential resistance. (NDR) element is added to the layer structure of the conventional emitter. In accordance with the invention, the NDR element can be implemented, for example, by a Resonant Tunnel Diode (RTD) or an Esaki Diode structure. The NDR element is designed to limit the tunneling current to the maximal emitter current density required for safe transistor operation, thereby also reducing the current crowding effect.