This inventor holds 1 USPTO granted patent. Top assignee: Hughes Aircraft Company. Active years: 1995.
Company Filing History:
Years Active: 1995
Title: Damodaran Rajavel: Innovator in II-VI Materials Growth
Introduction
Damodaran Rajavel is a notable inventor based in Los Angeles, CA. He has made significant contributions to the field of materials science, particularly in the growth of II-VI materials on silicon substrates. His innovative approaches have the potential to enhance the quality and efficiency of semiconductor devices.
Latest Patents
Rajavel holds a patent titled "Method of growth of II-VI materials on silicon using As passivation." This patent describes a metalorganic arsenic source comprising R.sub.3-m AsH.sub.m, where R is an organic radical selected from the group consisting of C.sub.n H.sub.2n+1 and C.sub.n H.sub.2n-1. The invention allows for the termination of a silicon surface with arsenic without carbon contamination, enabling the subsequent growth of high-quality ZnSe. This method leverages the advantages of metalorganic molecular beam epitaxy (MOMBE) deposition techniques, which offer superior flux control compared to traditional methods.
Career Highlights
Damodaran Rajavel is currently associated with Hughes Aircraft Company, where he applies his expertise in materials science. His work has been instrumental in advancing the capabilities of semiconductor technologies. With 1 patent to his name, he continues to push the boundaries of innovation in his field.
Collaborations
Rajavel has collaborated with notable colleagues, including Jennifer J Zinck and John E Jensen. Their combined efforts contribute to the advancement of research and development in materials science.
Conclusion
Damodaran Rajavel's contributions to the growth of II-VI materials on silicon are noteworthy. His innovative methods and collaborations position him as a significant figure in the field of materials science. His work continues to influence the development of high-quality semiconductor technologies.