The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 1995
Filed:
Jul. 26, 1993
Jennifer J Zinck, Calabasas, CA (US);
Damodaran Rajavel, Los Angeles, CA (US);
John E Jensen, Newbury Park, CA (US);
Hughes Aircraft Company, Los Angeles, CA (US);
Abstract
A metalorganic arsenic source comprising R.sub.3-m AsH.sub.m, where R is an organic radical selected from the group consisting of C.sub.n H.sub.2n+1 and C.sub.n H.sub.2n-1, where n ranges from 1 to 6, and where m is 1 or 2, such as tert-butylarsine (t-BuAsH.sub.2), is useful in terminating a silicon surface with arsenic without carbon contamination, thereby permitting subsequent growth of high quality ZnSe. Use of this metalorganic arsenic source allows the full potential of the metalorganic molecular beam epitaxy (MOMBE) deposition technique, which has demonstrated superior flux control than that achieved by MBE, to be realized in the heteroepitaxy of HgCdTe on silicon substrates. Other metalorganic deposition procedures, such as MOVPE, may also be employed in the practice of the invention.