Damien Parissi

Title: The Innovative Contributions of Damien Parissi

Introduction

Damien Parissi is a notable inventor based in Saint-Paul-de-Varces, France. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on processes that enhance the efficiency and functionality of semiconductor-on-insulator structures.

Latest Patents

Among his latest patents is a process for producing a receiver substrate for a semiconductor-on-insulator structure specifically designed for radiofrequency applications. This innovative process involves several steps, including the provision of a semiconductor substrate with a charge-trapping layer made of polycrystalline silicon. The oxidation of this layer is performed at controlled temperatures to ensure optimal performance. Another significant patent is a method for manufacturing a semiconductor-on-insulator type structure by layer transfer. This method includes the bonding of a donor substrate to a receiver substrate, followed by the detachment of the donor substrate along an embrittlement zone, which is crucial for the successful transfer of the layer.

Career Highlights

Damien Parissi is currently employed at Soitec, a company renowned for its advancements in semiconductor materials and technologies. His work at Soitec has positioned him as a key player in the development of innovative semiconductor solutions.

Collaborations

Throughout his career, Damien has collaborated with esteemed colleagues such as Marcel Broekaart and Daniel Delprat. These collaborations have further enriched his contributions to the field of semiconductor technology.

Conclusion

Damien Parissi's innovative work in semiconductor technology, particularly in the development of processes for semiconductor-on-insulator structures, showcases his expertise and commitment to advancing the field. His contributions are vital for the ongoing evolution of semiconductor applications.