The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2024
Filed:
Jan. 08, 2020
Soitec, Bernin, FR;
Marcel Broekaart, Theys, FR;
Damien Parissi, Saint-Paul-De-Varces, FR;
Soitec, Bernin, FR;
Abstract
A process for producing a receiver substrate for a semiconductor-on-insulator structure for radiofrequency application comprises the following steps:—providing a semiconductor substrate comprising a base substrate made of monocrystalline material and a charge-trapping layer made of polycrystalline silicon arranged on the base substrate;—oxidizing the charge-trapping layer to form an oxide layer arranged on the charge-trapping layer. The oxidation of the charge-trapping layer is performed at least partly at a temperature lower than or equal to 875° C., in the following manner:—starting the oxidization at a first temperature (T) between 750° C. and 1000° C.;—decreasing the temperature down to a second temperature (T), lower than the first temperature (T), between 750° C. and 875° C.;—continuing the oxidization at the second temperature (T).