Daizou Horie

Title: Daizou Horie: Innovator in Silicon Single Crystal Growth

Introduction

Daizou Horie is a notable inventor based in Amagasaki, Japan. He is recognized for his contributions to the field of materials science, particularly in the growth of silicon single crystals. His innovative methods have implications for various technological applications.

Latest Patents

Horie holds a patent for a method of growing silicon single crystals. This method utilizes silicon granules prepared by the silane process, which have a residual hydrogen concentration of 7.5 wtppm or less, and silicon granules prepared by the trichlorosilane process, which have a residual chlorine concentration of 15 wtppm or less. By using these specific silicon granules, the method prevents a bursting phenomenon during the melting process. Consequently, this leads to a reduction in scattered matter, ensuring that the growth conditions of the single crystal remain undisturbed. Horie's patent is a significant advancement in the field, with 1 patent to his name.

Career Highlights

Throughout his career, Daizou Horie has worked with prominent companies such as Kyushu Electronic Metal and Osaka Titanium Co., Ltd. His experience in these organizations has contributed to his expertise in materials science and innovation.

Collaborations

Horie has collaborated with notable individuals in his field, including Shin-ichi Sakurada and Tsutomu Kajimoto. These partnerships have likely enriched his research and development efforts.

Conclusion

Daizou Horie's work in the growth of silicon single crystals showcases his innovative spirit and dedication to advancing materials science. His patented method represents a significant contribution to the industry, highlighting the importance of precision in technological advancements.