The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 1991
Filed:
May. 26, 1989
Applicant:
Inventors:
Assignees:
Osaka Titanium Co., Ltd., Amagasaki, JP;
Kyushu Electronic Metal, Kishima, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B / ; C30B / ; C01B / ;
U.S. Cl.
CPC ...
1566201 ; 156D / ; 156D / ; 422249 ; 423348 ; 423349 ; 423350 ;
Abstract
A method for growing silicon single crystal uses as materials, silicon granules prepared by the silane process and having a residual hydrogen concentration of 7.5 wtppm or less, silicon granules prepared by the trichlorosilane process and having a residual chlorine concentration of 15 wtppm or less. In the case where such silicon granules are used, a bursting phenomenon does not occur when the silicon granules are melted. As a result, there is no scattered matter due to the bursting phenomenon, whereby the growth condition of the single crystal is not disturbed.