Company Filing History:
Years Active: 2015
Title: Daisuke Kurita: Innovator in Nitride Semiconductor Technology
Introduction
Daisuke Kurita is a prominent inventor based in Osaka, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of nitride semiconductor devices. His innovative work has led to advancements that enhance the performance and efficiency of electronic components.
Latest Patents
Daisuke Kurita holds a patent for a nitride semiconductor device. This invention focuses on reducing the contact resistance between an ohmic electrode and a nitride semiconductor layer. In his patent, he describes a GaN HFET where recesses are formed in a nitride semiconductor multilayer body composed of an undoped GaN layer and an undoped AlGaN layer on an Si substrate. The design includes source and drain electrodes formed in these recesses, with specific chlorine concentration peaks established at various depths to optimize performance. He has 1 patent to his name.
Career Highlights
Daisuke Kurita has been associated with Sharp Kabushiki Kaisha Corporation, where he has contributed to various projects and innovations in semiconductor technology. His work has been instrumental in advancing the capabilities of nitride semiconductor devices, which are crucial for modern electronic applications.
Collaborations
Throughout his career, Daisuke has collaborated with notable colleagues such as Tadashi Yasui and Satoshi Morishita. These collaborations have fostered a creative environment that encourages innovation and the sharing of ideas.
Conclusion
Daisuke Kurita's contributions to nitride semiconductor technology exemplify the impact of innovative thinking in the field of electronics. His patent and collaborative efforts continue to influence advancements in semiconductor devices, showcasing the importance of research and development in this dynamic industry.