The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2015
Filed:
Mar. 21, 2013
Sharp Kabushiki Kaisha, Osaka-shi, Osaka, JP;
Tadashi Yasui, Osaka, JP;
Satoshi Morishita, Osaka, JP;
Koichiro Fujita, Osaka, JP;
Daisuke Kurita, Osaka, JP;
SHARP KABUSHIKI KAISHA, Osaka, JP;
Abstract
A nitride semiconductor device is provide that can reduce contact resistance of an ohmic electrode and a nitride semiconductor layer. In a GaN HFET, recesses () are formed in a nitride semiconductor multilayer body () composed of an undoped GaN layer () and an undoped AlGaN layer () formed on an Si substrate (), and a source electrode () and a drain electrode () are formed in the recesses (). In a region deeper than an interface (S, S) between the GaN layer () and the source electrode () and drain electrode (), which are formed from a TiAl material, a first chlorine concentration peak (P) is formed in vicinity of the interface, and a second chlorine concentration peak (P) having a chlorine concentration of 1.3×10cmor lower is formed at a position deeper than the first chlorine concentration peak (P).