Sharp Kabushiki Kaisha Corporation

Daisuke Kurita

Satoshi Morishita

Koichiro Fujita

Tadashi Yasui

A nitride semiconductor device is provide that can reduce contact resistance of an ohmic electrode and a nitride semiconductor layer. In a GaN HFET, recesses () are formed in a nitride semiconductor multilayer body () composed of an undoped GaN layer () and an undoped AlGaN layer () formed on an Si substrate (), and a source electrode () and a drain electrode () are formed in the recesses (). In a region deeper than an interface (S, S) between the GaN layer () and the source electrode () and drain electrode (), which are formed from a TiAl material, a first chlorine concentration peak (P) is formed in vicinity of the interface, and a second chlorine concentration peak (P) having a chlorine concentration of 1.3&#xd7;10cmor lower is formed at a position deeper than the first chlorine concentration peak (P).

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Osaka, Japan

Daisuke Kurita