This inventor holds 2 USPTO granted patents and 2 published patent applications and 1 EPO patent. Top assignee: Changxin Memory Technologies, Inc.. Active years: 2024.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2024
Title: Dahan Qian: Innovator in Semiconductor Technology
Introduction
Dahan Qian is a prominent inventor based in Hefei, China. He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work focuses on innovative structures and methods that enhance semiconductor manufacturing processes.
Latest Patents
Dahan Qian's latest patents include a semiconductor structure and a method for manufacturing the same. The semiconductor structure features a doped conductive layer, a metal conductive layer, and a nitrogen-containing dielectric layer. Additionally, it incorporates two molybdenum nitride layers, each with distinct atomic ratios of nitrogen atoms. The method for manufacturing a semiconductor device involves thermal treatment on a substrate, which facilitates the diffusion of atoms and the interaction between dielectric layers.
Career Highlights
Dahan Qian is currently employed at Changxin Memory Technologies, Inc., where he continues to push the boundaries of semiconductor innovation. His expertise in the field has positioned him as a key player in advancing technology that is critical for modern electronics.
Collaborations
Dahan collaborates with talented coworkers, including Xiaojie Li and Jie Zhang. Their combined efforts contribute to the development of cutting-edge semiconductor solutions.
Conclusion
Dahan Qian's work in semiconductor technology exemplifies the spirit of innovation. His patents and contributions are paving the way for advancements in the industry.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile