Hsinchu, Taiwan

Dah Lin


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 37(Granted Patents)


Company Filing History:


Years Active: 2003

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1 patent (USPTO):Explore Patents

Title: Dah Lin: Innovator in Vertical Metal-Insulator-Metal Capacitor Technology

Introduction

Dah Lin is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the fabrication of advanced capacitors for embedded DRAM applications. His innovative approaches have paved the way for improved performance in electronic devices.

Latest Patents

Dah Lin holds a patent for "Fabrication methods of vertical metal-insulator-metal (MIM) capacitor for advanced embedded DRAM applications." This patent describes methods for fabricating a vertical MIM capacitor that can be integrated at any level of metal interconnect. The process is designed to maintain low temperatures, below 450°C, to prevent damage to back-end metal interconnects. The patent outlines techniques for forming deep capacitor cavities through etching and selective wet metal etching, followed by the sequential coating of conducting films and high-k dielectrics.

Career Highlights

Dah Lin is currently employed at Taiwan Semiconductor Manufacturing Company Limited, where he continues to innovate in semiconductor fabrication techniques. His work has been instrumental in enhancing the efficiency and reliability of memory technologies.

Collaborations

Dah Lin has collaborated with notable colleagues, including Yeur-Luen Tu and Min-hwa Chi. Their combined expertise has contributed to advancements in semiconductor technologies and the development of new fabrication methods.

Conclusion

Dah Lin's contributions to the field of semiconductor technology, particularly through his patented methods for MIM capacitors, highlight his role as a key innovator in the industry. His work continues to influence the development of advanced electronic devices.

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