Ansan, South Korea

Daehyun Kim

This inventor holds 3 USPTO granted patents. Top assignees: Industry-University Cooperation Foundation Hanyang University, Skhynix Inc.. Active years: 2021-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Daehyun Kim. Retrieved from https://idiyas.com/inventor/daehyun-kim-239nzbe9

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.8

ph-index = 1

Forward Citations = 1(Granted Patents)


Location History:

  • Ansan-si, KR (2021)
  • Icheon, KR (2023)

Company Filing History:


Years Active: 2021-2024

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3 patents (USPTO):Explore Patents

Title: Daehyun Kim: Innovator in Area-Selective Deposition Technologies

Introduction

Daehyun Kim is a prominent inventor based in Ansan, South Korea. He has made significant contributions to the field of electronic device fabrication, particularly through his innovative methods of area-selective deposition. With a total of 3 patents to his name, Kim's work is paving the way for advancements in semiconductor technology.

Latest Patents

Kim's latest patents include a "Method of Area-Selective Deposition" and a "Method of Fabricating an Electronic Device Using the Same." The area-selective deposition method involves providing a substrate structure that includes both silicon oxide and silicon nitride areas. This method performs surface treatments to form functional groups on each area, followed by an atomic layer deposition (ALD) process to selectively create a silicon oxide layer. The ALD process includes supplying an aminosilane-based silicon precursor, purging the chamber, and introducing an oxygen-containing source.

The second patent, related to the deposition method, also utilizes an ALD process. It involves providing a structure with silicon oxide and silicon nitride areas that have different surface characteristics. The process selectively forms a silicon oxide layer on the silicon oxide portion by adsorbing a silicon precursor and an inhibitor material, followed by purging the reactor and supplying an oxygen-containing source.

Career Highlights

Throughout his career, Daehyun Kim has worked with notable organizations, including the Industry-University Cooperation Foundation at Hanyang University and SK Hynix Inc. His experience in these institutions has allowed him to collaborate with leading experts in the field and contribute to groundbreaking research.

Collaborations

Kim has collaborated with talented individuals such as Changhan Kim and Jinseon Lee. These partnerships have further enhanced his innovative capabilities and have led to the development of advanced technologies in electronic device fabrication.

Conclusion

Daehyun Kim's contributions to area-selective deposition technologies are noteworthy and reflect his dedication to innovation in the semiconductor industry. His patents and collaborations highlight his role as a key figure in advancing electronic device fabrication methods.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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