The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2023
Filed:
Jan. 28, 2022
SK Hynix Inc., Icheon, KR;
Industry-university Cooperation Foundation Hanyang University Erica Campus, Ansan, KR;
Woo-Hee Kim, Siheung, KR;
Jinseon Lee, Jeonju, KR;
Jeong-Min Lee, Ansan, KR;
Daehyun Kim, Icheon, KR;
Changhan Kim, Icheon, KR;
SK hynix Inc., Icheon, KR;
Industry-University Cooperation Foundation Hanyang University ERICA Campus, Ansan, KR;
Abstract
A deposition method may include: providing a structure to be deposited that includes a silicon oxide area and a silicon nitride area having different surface characteristics from each other; and performing an atomic layer deposition (ALD) process in a reactor provided with the structure to selectively form a silicon oxide layer on the silicon oxide portion between the silicon oxide portion and the silicon nitride portion. The ALD process may include: supplying a silicon precursor into the reactor to selectively adsorb the silicon precursor to a surface of the silicon oxide portion; purging the reactor; supplying an inhibitor material into the reactor to selectively adsorb the inhibitor material to a surface of the silicon nitride portion; purging the reactor; supplying an oxygen-containing source into the reactor; and purging the reactor.