Hwasung-si, South Korea

Dae-Young Jang

USPTO Granted Patents = 2 

Average Co-Inventor Count = 5.5

ph-index = 1

Forward Citations = 1(Granted Patents)


Location History:

  • Suwon-si, KR (2010)
  • Hwasung-si, KR (2014)

Company Filing History:


Years Active: 2010-2014

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2 patents (USPTO):Explore Patents

Title: Dae-Young Jang: Innovator in Semiconductor Technology

Introduction

Dae-Young Jang is a prominent inventor based in Hwasung-si, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work focuses on innovative methods for forming semiconductor devices and wire structures.

Latest Patents

One of Dae-Young Jang's latest patents is for a Recess Gate Transistor. This patent describes a method of forming a semiconductor device that includes several steps, such as forming hard masks on a substrate, creating trenches, and depositing various layers to construct the device. Another notable patent is for a method of forming a wire structure. This method involves creating active regions on a substrate, etching to form grooves, and filling these grooves with wire, ultimately leading to the formation of contacts.

Career Highlights

Dae-Young Jang is currently employed at Samsung Electronics Co., Ltd., a leading company in the electronics industry. His work at Samsung has allowed him to push the boundaries of semiconductor technology and contribute to advancements in the field.

Collaborations

Throughout his career, Dae-Young Jang has collaborated with notable coworkers, including Ho-in Ryu and Bong-Su Kim. These collaborations have further enhanced his innovative capabilities and contributed to the success of his projects.

Conclusion

Dae-Young Jang is a key figure in semiconductor innovation, with a focus on developing advanced methods for device fabrication. His contributions continue to shape the future of technology in the electronics industry.

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