Jeollabuk-do, South Korea

Dae Woo Jeon

This inventor holds 1 USPTO granted patent. Top assignee: Korea Photonics Technology Institute. Active years: 2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Dae Woo Jeon. Retrieved from https://idiyas.com/inventor/dae-woo-jeon

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 10.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2015

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1 patent (USPTO):Explore Patents

Title: Biography of Inventor Dae Woo Jeon

Introduction: Dae Woo Jeon is a prominent inventor based in Jeollabuk-do, South Korea. He has made significant contributions to the field of semiconductor technology, particularly in the development of group III nitride substrates.

Latest Patents: Dae Woo Jeon holds a patent for a "Method for manufacturing a group III nitride substrate using a chemical lift-off process." This innovative method addresses the challenges associated with conventional polar group III nitride substrates, providing solutions that enhance the performance of various electronic devices.

Career Highlights: Dae Woo Jeon is affiliated with the Korea Photonics Technology Institute, where he has been instrumental in advancing research and development in photonics and semiconductor materials. His work has garnered attention for its potential applications in the electronics industry.

Collaborations: Throughout his career, Dae Woo Jeon has collaborated with notable colleagues, including Jin Woo Ju and Jong Hyeob Baek. These partnerships have contributed to the successful development of innovative technologies and patents.

Conclusion: Dae Woo Jeon's contributions to the field of semiconductor technology and his innovative patent demonstrate his commitment to advancing electronic device manufacturing. His work continues to influence the industry and inspire future innovations.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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