The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2015
Filed:
Nov. 04, 2011
Jin Woo Ju, Gwangju, KR;
Jong Hyeob Baek, Daejeon, KR;
Hyung JO Park, Gwangju, KR;
Sang Hern Lee, Gwangju, KR;
Tak Jung, Gwangju, KR;
Ja Yeon Kim, Gwangju, KR;
Hwa Seop OH, Gwangju, KR;
Tae Hoon Chung, Seoul, KR;
Yoon Seok Kim, Gwangju, KR;
Dae Woo Jeon, Jeollabuk-do, KR;
Jin Woo Ju, Gwangju, KR;
Jong Hyeob Baek, Daejeon, KR;
Hyung Jo Park, Gwangju, KR;
Sang Hern Lee, Gwangju, KR;
Tak Jung, Gwangju, KR;
Ja Yeon Kim, Gwangju, KR;
Hwa Seop Oh, Gwangju, KR;
Tae Hoon Chung, Seoul, KR;
Yoon Seok Kim, Gwangju, KR;
Dae Woo Jeon, Jeollabuk-do, KR;
KOREA PHOTONICS TECHNOLOGY INSTITUTE, Gwangju, KR;
Abstract
The non-polar or semi-polar group III nitride layer disclosed in a specific example of the present invention can be used for substrates for various electronic devices, wherein problems of conventional polar group III nitride substrates are mitigated or solved by using the nitride substrate of the invention, and further the nitride substrate can be manufactured by a chemical lift-off process.