Busan, South Korea

Dae Sik Kim

This inventor holds 1 USPTO granted patent. Top assignee: Moohan Co., Ltd.. Active years: 2008.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Dae Sik Kim. Retrieved from https://idiyas.com/inventor/dae-sik-kim-jvuq0oln

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 15(Granted Patents)


Company Filing History:


Years Active: 2008

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1 patent (USPTO):Explore Patents

Title: Dae Sik Kim: Innovator in Semiconductor Manufacturing

Introduction

Dae Sik Kim is a prominent inventor based in Busan, South Korea. He has made significant contributions to the field of semiconductor manufacturing, particularly through his innovative patent.

Latest Patents

Dae Sik Kim holds a patent for a "Method for manufacturing semiconductor device." This patent discloses a plasma-enhanced atomic layer deposition (PEALD) apparatus and method for manufacturing semiconductor devices. The PEALD apparatus includes a housing with a reaction chamber for deposition reactions, a rotary disk unit with multiple susceptors for wafer movement, and a gas spray unit for delivering reactive and inert gases. Additionally, it features a gas feed unit, a gas exhaust port, and a plasma generator for exciting the second reactive gas.

Career Highlights

Dae Sik Kim has established himself as a key figure in the semiconductor industry. His work at Moohan Co., Ltd. has been instrumental in advancing manufacturing techniques. His innovative approach has led to the development of efficient methods that enhance semiconductor production.

Collaborations

Dae Sik Kim has collaborated with notable colleagues, including Cheol Ho Shin and Sang Tae Sim. Their combined expertise has contributed to the success of various projects within the company.

Conclusion

Dae Sik Kim's contributions to semiconductor manufacturing through his innovative patent demonstrate his commitment to advancing technology in this critical field. His work continues to influence the industry and inspire future innovations.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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