The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2008
Filed:
Mar. 15, 2006
Cheol Ho Shin, Chungcheongnam-do, KR;
Byoung Ha Cho, Daejeon, KR;
Sang Tae Sim, Chungcheongbuk-do, KR;
Jung Soo Kim, Chungcheongnam-do, KR;
Won Hyung Lee, Chungcheongnam-do, KR;
Dae Sik Kim, Busan, KR;
Cheol Ho Shin, Chungcheongnam-do, KR;
Byoung Ha Cho, Daejeon, KR;
Sang Tae Sim, Chungcheongbuk-do, KR;
Jung Soo Kim, Chungcheongnam-do, KR;
Won Hyung Lee, Chungcheongnam-do, KR;
Dae Sik Kim, Busan, KR;
Moohan Co., Ltd., Chungcheongnam-Do, KR;
Abstract
Disclosed are PEALD (plasma-enhanced atomic layer deposition) apparatus and PEALD method for manufacturing a semiconductor device, the PEALD apparatus comprising: a housing including a reaction chamber in which a deposition reaction is performed; a rotary disk unit installed in the housing and provided with a plurality of susceptors for receiving wafers thereon so as to move the wafers; a gas spray unit mounted on the upper end of the housing above the rotary disk unit, and provided with first reactive gas sprayers, second reactive gas sprayers and inert gas sprayers on a lower surface of a circular disk for spraying respective gases into the housing; a gas feed unit connected to the gas spray unit for supplying first and second reactive gases and a purge gas into the housing; a gas exhaust port formed around the rotary disk unit; and a plasma generator for generating plasma to excite the second reactive gas.