Dae-Hwang Kim

Title: Dae-Hwang Kim: Innovator in Phase Change Memory Technology

Introduction

Dae-Hwang Kim is a notable inventor recognized for his contributions to the field of phase change memory technology. His innovative work has led to the development of advanced memory systems that have significant implications for electronic components.

Latest Patents

Dae-Hwang Kim holds a patent related to phase change memory, which includes a memory material layer consisting of a phase change material. This invention features a first and second electrical contact positioned at a distance from one another, allowing a current signal to traverse a switching zone of the memory material layer. The current signal induces a reversible phase change between a crystalline phase and an amorphous phase, resulting in a change in resistance of the phase change material. His patent encompasses a phase change memory assembly, a phase change memory cell, a 2D phase change memory cell array, a 3D phase change memory cell array, and an electronic component.

Career Highlights

Throughout his career, Dae-Hwang Kim has worked at prestigious institutions, including the Rheinisch-Westfälische Technische Hochschule Aachen and the Commissariat à l'Énergie Atomique. His work in these organizations has contributed to advancements in memory technology and electronic components.

Collaborations

Dae-Hwang Kim has collaborated with notable professionals in his field, including Peter Haring Bolivar and Bernard Bechevet. These collaborations have further enriched his research and development efforts.

Conclusion

Dae-Hwang Kim's innovative contributions to phase change memory technology highlight his role as a significant inventor in the electronics industry. His work continues to influence advancements in memory systems and electronic components.