The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2011
Filed:
Oct. 19, 2004
Peter Haring Bolivar, Wenden, DE;
Bernard Bechevet, Claix, FR;
Veronique Sousa, Grenoble, FR;
Dae-hwang Kim, Aachen, DE;
Heinrich Kurz, Aachen, DE;
Florian Merget, Aachen, DE;
Peter Haring Bolivar, Wenden, DE;
Bernard Bechevet, Claix, FR;
Veronique Sousa, Grenoble, FR;
Dae-Hwang Kim, Aachen, DE;
Heinrich Kurz, Aachen, DE;
Florian Merget, Aachen, DE;
Rheinisch-Westfaelische Technische Hochschle Aachen, Aachen, DE;
Commisssariat a l'Energie Atomique, Paris, FR;
Abstract
A phase change memory having a memory material layer consisting of a phase change material, and a first and second electrical contact which are located at a distance from one another and via which a switching zone of the memory material layer can be traversed by a current signal, wherein the current signal can be used to induce a reversible phase change between a crystalline phase and an amorphous phase and thus a change in resistance of the phase change material in the switching zone. The invention also relates to a phase change memory assembly, a phase change memory cell, a 2D phase change memory cell array, a 3D phase change memory cell array and an electronic component.