Commissariat a L'energie Atomique

Rheinisch-Westfaelische Technische Hochschle Aachen

Rheinisch-Westfalische Technische Hochschule Aachen

Dae-Hwang Kim

Bernard Bechevet

Veronique Sousa

Heinrich Kurz

Peter Haring Bolivar

Florian Merget

Peter Haring-Bolivar

A phase change memory having a memory material layer consisting of a phase change material, and a first and second electrical contact which are located at a distance from one another and via which a switching zone of the memory material layer can be traversed by a current signal, wherein the current signal can be used to induce a reversible phase change between a crystalline phase and an amorphous phase and thus a change in resistance of the phase change material in the switching zone. The invention also relates to a phase change memory assembly, a phase change memory cell, a 2D phase change memory cell array, a 3D phase change memory cell array and an electronic component.

Phase change memory, phase change memory assembly, phase change memory cell, 2D phase change memory cell array, 3D phase change memory cell array and electronic component

Growing community of inventors

Aachen, Germany

Dae-Hwang Kim