Ichon, South Korea

Dae Hee Weon

This inventor holds 1 USPTO granted patent. Top assignee: Conversant IP N.b. 868 Inc.. Active years: 2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Dae Hee Weon. Retrieved from https://idiyas.com/inventor/dae-hee-weon-nzioa8ml

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1


Company Filing History:


Years Active: 2014

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1 patent (USPTO):Explore Patents

Title: Dae Hee Weon: Innovator in Semiconductor Technology

Introduction: Dae Hee Weon is a notable inventor based in Ichon-Shi, South Korea. He has made significant contributions to the field of semiconductor technology, particularly through his innovative methods in manufacturing semiconductor devices.

Latest Patents: Dae Hee Weon holds a patent for a "Method of forming a contact plug for a semiconductor device." This patent outlines a process that includes forming an insulating layer on a silicon substrate, creating a contact hole on the insulating layer, and subsequently forming a selective silicon layer and a conductive plug within the contact hole. This method enhances the efficiency and reliability of semiconductor devices.

Career Highlights: Dae Hee Weon is currently employed at Conversant IP N.B. 868 Inc., where he continues to develop and refine technologies that impact the semiconductor industry. His work is characterized by a commitment to innovation and excellence.

Collaborations: Dae Hee Weon collaborates with Seok Kiu Lee, a talented female engineer, to advance their projects and share insights in their field. Their partnership exemplifies the importance of teamwork in driving technological advancements.

Conclusion: Dae Hee Weon's contributions to semiconductor technology through his innovative patent and collaborative efforts highlight his role as a key figure in the industry. His work continues to influence the development of efficient semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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