This inventor holds 1 USPTO granted patent. Top assignee: Ningbo Crrc Times Transducer Technology Co., Ltd.. Active years: 2019.
Company Filing History:
Years Active: 2019
Title: The Innovative Contributions of Dacheng Ni
Introduction
Dacheng Ni is a prominent inventor based in Zhejiang, China. He has made significant contributions to the field of semiconductor technology, particularly through his innovative methods in thin film preparation. His work has implications for various applications in electronics and materials science.
Latest Patents
Dacheng Ni holds a patent for a semiconductor silicon-germanium thin film preparation method. This method involves several steps, including cleaning a mono-crystalline silicon substrate and placing it on a substrate table. He then sputters a silicon single thin film and a germanium single thin film. Following this, he deposits a silicon-germanium alloy thin film with varying components on another single crystal silicon substrate using a co-sputtering method. The process includes measuring the thickness of the deposited thin film to achieve a silicon-germanium alloy thin film with different component ratios. This patent showcases his expertise and innovative approach in semiconductor fabrication.
Career Highlights
Dacheng Ni is associated with Ningbo CRRC Times Transducer Technology Co., Ltd., where he applies his knowledge and skills in semiconductor technology. His work at this company highlights his commitment to advancing technology and innovation in the field.
Collaborations
Dacheng Ni collaborates with talented individuals such as Xiaowei Hou and Junjie Guo. These partnerships enhance his research and development efforts, contributing to the advancement of semiconductor technologies.
Conclusion
Dacheng Ni's contributions to semiconductor technology through his innovative patent and collaborative efforts position him as a key figure in the field. His work continues to influence advancements in electronics and materials science.