The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2019
Filed:
Aug. 10, 2016
Ningbo Crrc Times Transducer Technology Co., Ltd., Ningbo, Zhejiang, CN;
Xiaowei Hou, Zhejiang, CN;
Junjie Guo, Zhejiang, CN;
Dacheng Ni, Zhejiang, CN;
Fei Wang, Zhejiang, CN;
Huaxiong Zheng, Zhejiang, CN;
Liangguang Zheng, Zhejiang, CN;
Juping Li, Zhejiang, CN;
NINGBO CRRC TIMES TRANSDUCER TECHNOLOGY CO., LTD., Ningbo, Zhejiang, CN;
Abstract
A semiconductor silicon-germanium thin film preparation method, comprising the following steps: cleaning a mono-crystalline silicon substrate and then disposing the same on a substrate table; respectively sputtering a silicon single thin film and a germanium single thin film; depositing a silicon-germanium alloy thin film having different components on another single crystal silicon substrate using a co-sputtering method, measuring the thickness of the deposited thin film, and obtaining a silicon-germanium alloy thin film having different component ratios.