Fujian, China

Dacheng Li

This inventor holds 1 USPTO granted patent. Top assignee: Quanzhou Sanan Semiconductor Technology Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Dacheng Li. Retrieved from https://idiyas.com/inventor/dacheng-li-mh5ka8rw

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: The Innovative Contributions of Dacheng Li

Introduction

Dacheng Li is a prominent inventor based in Fujian, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of light-emitting diode (LED) devices. His innovative work has led to advancements in efficiency and reliability in LED technology.

Latest Patents

Dacheng Li holds a patent for a "Light-emitting diode device with improved airtightness, luminous efficiency, and reliability." This LED device includes a substrate, an LED chip, a light-transmissive element, and a bonding layer. The substrate features a functional region where the LED chip is placed. The light-transmissive element covers the LED chip, while the bonding layer connects the substrate to the light-transmissive element, enhancing the device's performance. He has 1 patent to his name.

Career Highlights

Dacheng Li is associated with Quanzhou Sanan Semiconductor Technology Co., Ltd., where he continues to push the boundaries of LED technology. His work at this company has been instrumental in developing high-quality semiconductor products that meet the demands of modern applications.

Conclusion

Dacheng Li's contributions to LED technology exemplify the spirit of innovation in the semiconductor industry. His patent reflects a commitment to improving the efficiency and reliability of lighting solutions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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