D Scott Katzer

Title: D Scott Katzer: Innovator in Acoustic Wave Devices

Introduction

D Scott Katzer is a notable inventor based in Alexandria, VA (US). He has made significant contributions to the field of acoustic wave devices, particularly through his innovative patent.

Latest Patents

D Scott Katzer holds a patent for "Multifunctional integrated acoustic devices and systems using epitaxial materials." This patent encompasses acoustic wave devices that utilize epitaxially grown heterostructures. These structures consist of combinations of metallic transition metal nitride (TMN) layers, Group III-nitride (III-N) piezoelectric semiconductor thin film layers, and perovskite oxide (PO) layers. The devices covered by this patent include bulk acoustic wave (BAW) devices, surface acoustic wave (SAW) devices, high overtone bulk acoustic resonator (HBAR) devices, and composite devices that integrate HBAR devices with high-electron-mobility transistors (HEMTs).

Career Highlights

D Scott Katzer is currently associated with the United States Navy, where he contributes his expertise in acoustic technologies. His work has been instrumental in advancing the capabilities of acoustic devices, which have various applications in communication and sensing technologies.

Collaborations

Throughout his career, D Scott Katzer has collaborated with notable professionals in the field, including Vikrant J Gokhale and Brian P Downey. These collaborations have further enhanced the development and application of innovative acoustic technologies.

Conclusion

D Scott Katzer's contributions to the field of acoustic wave devices demonstrate his commitment to innovation and technology advancement. His patent reflects a significant step forward in the integration of advanced materials for acoustic applications.