The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2023
Filed:
Sep. 14, 2020
The Government of the United States of America, As Represented BY the Secretary of the Navy, Arlington, VA (US);
Vikrant J. Gokhale, Alexandria, VA (US);
Brian P. Downey, Cheverly, MD (US);
Matthew T. Hardy, Arlington, VA (US);
Eric N. Jin, Alexandria, VA (US);
Neeraj Nepal, Woodbridge, VA (US);
D. Scott Katzer, Alexandria, VA (US);
David J. Meyer, Annandale, VA (US);
Abstract
Acoustic wave devices based on epitaxially grown heterostructures comprising appropriate combinations of epitaxially grown metallic transition metal nitride (TMN) layers, epitaxially grown Group III-nitride (III-N) piezoelectric semiconductor thin film layers, and epitaxially grown perovskite oxide (PO) layers. The devices can include bulk acoustic wave (BAW) devices, surface acoustic wave (SAW) devices, high overtone bulk acoustic resonator (HBAR) devices, and composite devices comprising HBAR devices integrated with high-electron-mobility transistors (HEMTs).