Company Filing History:
Years Active: 2008
Title: D J Perng: Innovator in ESD Protection Technology
Introduction
D J Perng is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of electrostatic discharge (ESD) protection technology. His innovative work has led to the development of a patented structure that enhances the reliability of MOS devices during ESD events.
Latest Patents
D J Perng holds a patent for an "ESD structure for high voltage ESD protection." This patent describes an electrostatic discharge-protected MOS structure that includes a semiconductor substrate of a first type, a first well of the first type formed in the semiconductor substrate, and a second well of a second type disposed adjacent to the first well. The structure further comprises a source region, a drain region, and an oxide layer along with a polysilicon layer for forming a gate electrode. Additionally, the MOS structure includes a parasitic SCR that comprises at least a parasitic NPN bipolar transistor and a buried layer of the second type interposed between the second well and the semiconductor substrate. The buried layer functions to lower the resistance of the semiconductor substrate during an ESD event, allowing ESD currents generated by the parasitic SCR to be dissipated through the buried layer and the semiconductor substrate, thereby protecting the MOS structure.
Career Highlights
D J Perng is currently associated with Taiwan Semiconductor Manufacturing Company Limited, where he continues to work on advancements in semiconductor technology. His expertise in ESD protection has positioned him as a valuable asset in the industry.
Collaborations
D J Perng has collaborated with notable colleagues such as Shui-Hung Chen and Jian-Hsing Lee, contributing to various projects that enhance semiconductor reliability and performance.
Conclusion
D J Perng's innovative contributions to ESD protection technology demonstrate his commitment to advancing semiconductor reliability. His patent and ongoing work continue to influence the field positively.