Hong Kong, China

Curito M Bilan, Jr

This inventor holds 1 USPTO granted patent. Top assignee: Asm Assembly Automation Limited. Active years: 2004.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Curito M Bilan, Jr. Retrieved from https://idiyas.com/inventor/curito-m-bilan-jr

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 13(Granted Patents)


Company Filing History:


Years Active: 2004

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1 patent (USPTO):Explore Patents

Title: Curito M Bilan, Jr: Semiconductor Testing Invention.

Introduction

Curito M Bilan, Jr. is an inventor associated with Hong Kong, China, and Asm Assembly Automation Limited. His patent work addresses the handling and testing of singulated semiconductor devices.

Latest Patents

Bilan is credited with 1 patent: “Apparatus and Method for Testing Semiconductor Devices.” The invention describes an apparatus with a main body and a support member made from non-conducting, high-resistivity material. The support member contains multiple recesses, each designed to hold an individual singulated electronic device during testing. The disclosed method carries devices on support members through a testing process that may include one or more environmental control chambers.

Career Highlights

The available information connects Bilan’s invention to semiconductor-device testing and identifies Asm Assembly Automation Limited as his company. The patent focuses on supporting individual devices during testing and enabling their passage through controlled testing environments.

Collaborations

Bilan’s listed coworkers include Eric Chow and Ching Man Stanley Tsui. The available details do not specify their roles in the patent or the invention.

Conclusion

Curito M Bilan, Jr.’s patent describes a support system and testing method for singulated semiconductor devices, with an emphasis on secure handling and environmental control.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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