Rüschlikon, Switzerland

Clarissa Convertino

This inventor holds 6 USPTO granted patents and 2 published patent applications. Top assignee: International Business Machines Corporation. Active years: 2021-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Clarissa Convertino. Retrieved from https://idiyas.com/inventor/clarissa-convertino

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 6 

% Patents Active = 100.0

Average Co-Inventor Count = 3.7

ph-index = 1

Forward Citations = 1(Granted Patents)


Location History:

  • Zurich, CH (2021 - 2023)
  • Rueschlikon, CH (2021 - 2023)

Company Filing History:


Years Active: 2021-2023

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6 patents (USPTO):Explore Patents

Title: Clarissa Convertino: Innovator in Semiconductor Technology

Introduction

Clarissa Convertino is a prominent inventor based in Rueschlikon, Switzerland. She has made significant contributions to the field of semiconductor technology, holding a total of 6 patents. Her innovative work focuses on enhancing the performance and efficiency of field-effect transistors (FETs) through advanced nanosheet technologies.

Latest Patents

One of her latest patents is titled "Hybrid nanosheet tunnel-FET/CMOS technology." This method involves forming heterogeneous complementary FETs and a related semiconductor structure. The process includes creating a layered nanosheet stack with alternating layers of two different channel materials, followed by the deposition of a dielectric layer and the formation of a checkered mask material. This innovative approach results in a unique arrangement of pillars that enhances the functionality of the transistors.

Another notable patent is "Complementary 3D nanosheet matrix FETs." This method describes a compact stacked nanosheet process for forming heterogeneous complementary FETs. It involves creating a first nanosheet stack with two layers of a first channel material and a second sacrificial layer, followed by the formation of a complementary second nanosheet stack. The process culminates in the construction of a gate-all-around structure that encapsulates all channels, significantly improving device performance.

Career Highlights

Clarissa Convertino is currently employed at IBM, where she continues to push the boundaries of semiconductor technology. Her work has been instrumental in developing advanced FET structures that promise to revolutionize the industry.

Collaborations

Throughout her career, she has collaborated with notable colleagues, including Cezar Bogdan Zota and Kirsten Emilie Moselund. These partnerships have fostered a dynamic environment for innovation and research.

Conclusion

Clarissa Convertino's contributions to semiconductor technology through her patents and collaborations highlight her role as a leading inventor in the field. Her innovative approaches are paving the way for future advancements in electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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