This inventor holds 1 USPTO granted patent and 2 published patent applications. Top assignee: Stmicroelectronics Gmbh. Active years: 2025.
Company Filing History:
Years Active: 2025
Title: Churn Weng Yim: Innovator in Integrated Circuit Technology
Introduction
Churn Weng Yim is a notable inventor based in Singapore, recognized for his contributions to the field of integrated circuit technology. He has developed innovative solutions that enhance the performance and efficiency of semiconductor devices. His work is particularly significant in the realm of power MOSFETs, which are crucial for various electronic applications.
Latest Patents
Churn Weng Yim holds a patent for a "Gate contact structure for a trench power MOSFET with a split gate configuration." This invention involves an integrated circuit transistor device that includes a semiconductor substrate providing a drain, a first doped region buried in the substrate providing a body, and a second doped region providing a source. The design features a trench that extends into the substrate, passing through both doped regions. An insulated polygate region within the trench surrounds a polyoxide region that may have void inclusion. The polygate region is formed by a first gate lobe and a second gate lobe on opposite sides of the polyoxide region. Additionally, a pair of gate contacts is provided at each trench, with specific configurations to optimize performance.
Career Highlights
Churn Weng Yim is currently employed at STMicroelectronics GmbH, a leading company in semiconductor solutions. His role involves research and development, where he applies his expertise to create advanced technologies that meet the demands of modern electronics. His innovative approach has led to significant advancements in the efficiency and reliability of semiconductor devices.
Collaborations
Churn Weng Yim has collaborated with several talented individuals in his field, including Voon Cheng Ngwan and Ditto Adnan. These collaborations have fostered a creative environment that encourages the exchange of ideas and the development of cutting-edge technologies.
Conclusion
Churn Weng Yim is a prominent figure in the field of integrated circuit technology, with a focus on enhancing power MOSFET designs. His innovative patent and contributions to STMicroelectronics GmbH highlight his commitment to advancing semiconductor technology. His work continues to influence the industry and pave the way for future innovations.