This inventor holds 1 USPTO granted patent and 3 published patent applications. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Chunting Lee and Advances in MOL Interconnect Technology.
Introduction
Chunting Lee is an inventor based in Hsinchu, Taiwan. His patent work includes a middle-of-line (MOL) interconnect design that uses molybdenum-containing structures to support semiconductor device connections.
Latest Patents
Lee is associated with 1 patent, titled “Molybdenum-Containing Device-Level Interconnects.” The patent describes MOL interconnect structures and techniques for forming them. Its design includes barrier-free source/drain contacts, source/drain vias, and gate vias within an insulator layer. The contacts and gate vias may contain tungsten, molybdenum, or both, while the source/drain vias include molybdenum. The patent also describes vias narrower than about 16 nanometers and the possibility of forming source/drain and gate vias together through a shared bottom-up deposition process.
Career Highlights
Lee is associated with Taiwan Semiconductor Manufacturing Company Limited. His patent focuses on materials and fabrication techniques for compact semiconductor interconnects.
Collaborations
The provided information identifies Hsiao Chu Chen and Wei-Hsuan Chen as Lee’s coworkers. Their names are associated with his professional context, though specific roles in the patent are not provided.
Conclusion
Chunting Lee’s patent addresses barrier-free, molybdenum-containing MOL interconnects and fabrication methods intended for semiconductor devices.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile