Chung-Wei Hsueh

Title: Innovations of Chung-Wei Hsueh in Semiconductor Manufacturing.

Introduction

Chung-Wei Hsueh is a notable inventor based in Kaohsiung, Taiwan. He has made significant contributions to the field of semiconductor manufacturing. His innovative methods have the potential to enhance the efficiency and effectiveness of semiconductor devices.

Latest Patents

Chung-Wei Hsueh holds a patent for a "Method for manufacturing semiconductor device and device manufactured using the same." This patent outlines a method that involves providing a substrate with a dielectric layer. Plural trenches are defined in the dielectric layer, which are isolated by the dielectric layer. A first barrier layer is formed in the trenches as barrier liners, followed by filling the trenches with a conductor. The conductor in the trenches is then partially removed to create a plurality of recesses, ensuring that the remaining conductor has a flat surface. Finally, a second barrier layer is formed in the recesses as barrier caps of the trenches.

Career Highlights

Chung-Wei Hsueh is currently employed at United Microelectronics Corporation, a leading company in the semiconductor industry. His work focuses on advancing semiconductor technologies and improving manufacturing processes. His innovative approach has garnered attention within the industry.

Collaborations

Chung-Wei Hsueh has collaborated with notable colleagues, including Hsin-Kuo Hsu and Li-Chieh Hsu. These collaborations have contributed to the development of advanced semiconductor technologies.

Conclusion

Chung-Wei Hsueh's contributions to semiconductor manufacturing highlight his innovative spirit and dedication to advancing technology. His patent and collaborative efforts reflect his commitment to improving the efficiency of semiconductor devices.