This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Chung-Shih Chiang and High-Voltage Device Innovation.
Introduction
Chung-Shih Chiang is an inventor associated with Hsinchu, Taiwan, and Taiwan Semiconductor Manufacturing Company Limited. His patent work addresses high-voltage semiconductor device structures and methods for forming them.
Latest Patents
Chiang is associated with 1 patent: “High Voltage Device Structure and Methods of Forming the Same.” The patent describes a structure with a deep well region and a doped region in a substrate, surrounded by a well region. It also includes source and drain regions, along with a pickup region that contacts the source laterally. The pickup, well, and deep well regions are electrically connected. This arrangement provides a structural approach to implementing a high-voltage device.
Career Highlights
Chiang’s listed invention concerns semiconductor device design and fabrication, an area relevant to the development of high-voltage components. His work is associated with Taiwan Semiconductor Manufacturing Company Limited, a semiconductor company based in Taiwan.
Collaborations
Chien-Ming Ku is identified as Chiang’s coworker. The available information does not specify a particular joint patent or project between them.
Conclusion
Chung-Shih Chiang’s patent reflects his contribution to high-voltage semiconductor device design through a structure that integrates connected well regions with source and drain components.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile