Chung S Wang

Title: Innovations by Chung S. Wang

Introduction

Chung S. Wang is a notable inventor based in Plano, TX (US). He has made significant contributions to the field of technology, particularly in the area of semiconductor processing. With a total of 2 patents, his work has had a considerable impact on the industry.

Latest Patents

One of his latest patents is a plasma etch method for TiO.sub.2. This method involves plasma etching of TiO.sub.2 using a mixture of oxygen and a fluorine-bearing species, preferably CF.sub.4. This innovative mixture provides good selectivity over aluminum and photoresist, and approximately unity selectivity over silica or silicon nitride. The invention also teaches the use of a chlorine-containing species, which offers different selectivities. Additionally, this method is useful for etching in the RIE mode. Another significant patent is a method for depositing polysilicon over TiO.sub.2. This process utilizes hydrogen annealing to permit the deposition of high-quality polysilicon atop TiO.sub.2. The hydrogen annealing of TiO.sub.2 prevents the tremendous hydrogen affinity of as-deposited TiO.sub.2 from disrupting process reactions during the polysilicon deposition.

Career Highlights

Chung S. Wang is currently associated with Texas Instruments Corporation, where he continues to innovate and contribute to advancements in technology. His work at Texas Instruments has positioned him as a key player in the semiconductor industry.

Collaborations

Throughout his career, Chung has collaborated with notable colleagues, including Donald J. Coleman, Jr. and Roger A. Haken. These collaborations have further enhanced his contributions to the field.

Conclusion

Chung S. Wang's innovative patents and contributions to semiconductor technology underscore his importance as an inventor. His work continues to influence advancements in the industry, showcasing the impact of his research and development efforts.