The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 1986
Filed:
Nov. 13, 1984
Applicant:
Inventor:
Chung S Wang, Plano, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
B23K / ; G02B / ;
U.S. Cl.
CPC ...
2191 / ; 2191 / ; 2041 / ; 156643 ; 156646 ;
Abstract
A method for plasma etching of TiO.sub.2, using a mixture of oxygen and a fluorine-bearing species, preferably CF.sub.4. This mixture gives good selectivity over aluminum and photoresist, and approximately unity selectivity over silica or silicon nitride. Use of a chlorine-containing species is also taught by the invention, and will provide different selectivities. The present invention is also useful for etching in the RIE mode.
Wang, Chung. (1986). Plasma etch method for tio.sub.2 (U.S. Patent No. 4574177). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4574177
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile