Taichung County, Taiwan

Chung-Ming Huang


Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2011

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1 patent (USPTO):Explore Patents

Title: Chung-Ming Huang: Innovating Metal Oxide Semiconductor Devices

Introduction: Chung-Ming Huang, an accomplished inventor based in Taichung County, Taiwan, has made significant contributions to the field of semiconductor technology. With a focus on designing advanced devices, he has secured a patent for a metal oxide semiconductor device that showcases innovative engineering and design.

Latest Patents: Chung-Ming Huang holds a single patent for a metal oxide semiconductor device that comprises a substrate, at least one isolation structure, a deep N-type well, a P-type well, a gate, multiple N-type extension regions, an N-type drain region, an N-type source region, and a P-type doped region. This inventive design strategically positions the N-type extension regions between isolation structures and on either side of the gate. The patent outlines a device where the N-type drain and source regions are effectively located within the N-type extension regions, while the surrounding P-type well enforces enhanced functionality. This invention presents significant advancements in the efficiency and performance of semiconductor devices.

Career Highlights: Chung-Ming Huang's professional career includes his role at United Microelectronics Corporation, a prominent player in the semiconductor industry. His expertise in semiconductor devices has been pivotal for the development and enhancement of cutting-edge technology, allowing for improved device performance and reliability.

Collaborations: Throughout his career, Chung-Ming Huang has collaborated with distinguished professionals such as Shin-Kuang Lin and Lung-Chih Wang. These partnerships have fostered an environment of innovation, leading to groundbreaking developments in semiconductor technology.

Conclusion: Chung-Ming Huang stands as a notable figure in the field of semiconductor innovation. His patented metal oxide semiconductor device underscores his commitment to advancing technology and contributing to the ever-evolving landscape of electronics. As the industry continues to progress, his work at United Microelectronics Corporation and collaborations with notable colleagues will undeniably influence future developments in semiconductor devices.

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