The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2011
Filed:
Dec. 11, 2008
Shin-kuang Lin, Hsinchu, TW;
Lung-chih Wang, Hsinchu County, TW;
Chung-ming Huang, Taichung County, TW;
Che-ching Yang, Taipei, TW;
Chun-ming Chen, Hsinchu, TW;
Shin-Kuang Lin, Hsinchu, TW;
Lung-Chih Wang, Hsinchu County, TW;
Chung-Ming Huang, Taichung County, TW;
Che-Ching Yang, Taipei, TW;
Chun-Ming Chen, Hsinchu, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A metal oxide semiconductor device comprising a substrate, at least an isolation structure, a deep N-type well, a P-type well, a gate, a plurality of N-type extension regions, an N-type drain region, an N-type source region and a P-type doped region is provided. The N-type extension regions are disposed in the substrate between the isolation structures and either side of the gate, while the N-type drain region and the N-type source region are respectively disposed in the N-type extension regions at both sides of the gate. The P-type well surrounds the N-type extension regions, and the P-type doped region is disposed in the P-type well of the substrate and is isolated from the N-type source region by the isolation structure.