This inventor holds 1 USPTO granted patent and 2 published patent applications. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Innovations of Chung-Hung Lin in Defect Repair Technology
Introduction
Chung-Hung Lin is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of defect repair technology, particularly in the semiconductor industry. His innovative approach combines artificial intelligence with traditional repair methods to enhance efficiency and accuracy.
Latest Patents
Chung-Hung Lin holds a patent for an "Apparatus and methods for three dimensional reticle defect smart repair." This invention describes an AI-assisted substrate defect repair apparatus and method. The apparatus employs an object detection algorithm that utilizes multiple images taken by detectors positioned at various locations. These detectors capture different views of an object, including any defects present. The algorithm analyzes the images to determine the type of defect and recommends appropriate materials, such as etching gas, along with relevant information for effective repair.
Career Highlights
Chung-Hung Lin is currently employed at Taiwan Semiconductor Manufacturing Co., Ltd. His work focuses on integrating advanced technologies into semiconductor manufacturing processes. His innovative solutions have the potential to significantly reduce downtime and improve product quality.
Collaborations
Chung-Hung Lin collaborates with Po-Chien Huang, a fellow professional in the field. Their partnership enhances the development and implementation of cutting-edge technologies in defect repair.
Conclusion
Chung-Hung Lin's contributions to defect repair technology exemplify the intersection of artificial intelligence and semiconductor manufacturing. His innovative patent showcases the potential for improved efficiency in addressing substrate defects.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile