Chung-Hsiung Hung

Title: Innovations of Chung-Hsiung Hung

Introduction

Chung-Hsiung Hung is a notable inventor based in Jhubei, Taiwan. He has made significant contributions to the field of memory technology, holding a total of 3 patents. His work focuses on enhancing the performance and efficiency of memory devices.

Latest Patents

One of his latest patents is titled "Memory page buffer with simultaneous multiple bit programming capability." This technology involves a memory device that comprises multiple page buffers and control circuitry. Different page buffer circuits are connected to various bit lines in a memory array. The control circuitry responds to a program command, allowing multiple cells in the memory array to be programmed simultaneously by setting different target voltages for the bit lines connected to those cells.

Another significant patent is "Method and apparatus for reducing read disturb in memory." This invention includes a control circuit that applies a read bias arrangement to several word lines. This arrangement is designed to read a selected data value stored in multiple memory cells by measuring the current flowing between the ends of the series of memory cells. The read bias arrangement ensures that only word line voltages less than a second maximum of a second threshold voltage distribution are applied.

Career Highlights

Chung-Hsiung Hung is currently employed at Macronix International Co., Ltd., where he continues to innovate in the field of memory technology. His work has been instrumental in advancing the capabilities of NAND memory systems.

Collaborations

He has collaborated with notable colleagues such as Tom D. Yiu and Ray-Lin Wan, contributing to various projects and innovations within the company.

Conclusion

Chung-Hsiung Hung's contributions to memory technology through his patents and work at Macronix International Co., Ltd. highlight his role as a significant inventor in the field. His innovations continue to impact the development of advanced memory devices.