Macronix International Co., Ltd.

Chung-Hsiung Hung

Chung-Kuang Chen

Han-Sung Chen

Shuo-Nan Hung

Ray-Lin Wan

Tom D Yiu

Fuchia Shone

Tseng-Yi Liu

Yao-Wu Cheng

One aspect of the technology is a memory device, which comprises a plurality of page buffers and control circuitry. Different page buffer circuits in the plurality of page buffer circuits are coupled to different bit lines in a plurality of bit lines in a memory array. The control circuitry is responsive to a program command to program multiple cells in the memory array, by setting, via the plurality of page buffer circuits, different target voltages at a same time for the different bit lines coupled to the multiple cells.

Memory page buffer with simultaneous multiple bit programming capability

Various aspects of a NAND memory include a control circuit that applies a read bias arrangement to a plurality of word lines to read a selected data value stored on a plurality of memory cells by measuring current flowing between the first end and the second end of the series of memory cells. The read bias arrangement is applied to word lines of the plurality of word lines applies only word line voltages less than a second maximum of a second threshold voltage distribution.

Method and apparatus for reducing read disturb in memory

Floating gate memory device and method for terminating a program load

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Jhubei, Taiwan

Chung-Hsiung Hung