Chung Hoan Kim

Title: Innovations of Chung Hoan Kim

Introduction

Chung Hoan Kim is a notable inventor based in San Jose, CA (US). He has made significant contributions to the field of plasma processing technology. His innovative approach has led to the development of a unique method for recovering ashing rates in plasma processing chambers.

Latest Patents

Chung Hoan Kim holds a patent for an "Ash rate recovery method in plasma strip chamber." This method involves positioning a substrate within a processing volume of a chamber, where a silicon chloride residue is present. The process includes evaporating the silicon chloride residue from the substrate and depositing the evaporated material on the interior surfaces of the processing volume. Subsequently, the deposited silicon chloride is exposed to an oxidizing environment, converting it into a silicon oxide passivation layer. The oxidizing environment may consist of an oxygen-containing plasma or oxygen radicals.

Career Highlights

Chung Hoan Kim is currently employed at Applied Materials, Inc., a leading company in the semiconductor and display technology sectors. His work focuses on enhancing the efficiency and effectiveness of plasma processing techniques.

Collaborations

Chung has collaborated with notable colleagues, including Yongkwan Kim and Kyeong-Tae Lee, contributing to advancements in their shared field of expertise.

Conclusion

Chung Hoan Kim's innovative methods and contributions to plasma processing technology highlight his role as a significant inventor in the industry. His work continues to influence advancements in semiconductor manufacturing processes.