Hsinchu, Taiwan

Chung-Feng Nieh

This inventor holds 1 USPTO granted patent. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chung-Feng Nieh. Retrieved from https://idiyas.com/inventor/chung-feng-nieh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2019

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1 patent (USPTO):Explore Patents

Title: Chung-Feng Nieh: Innovator in Semiconductor Fabrication

Introduction

Chung-Feng Nieh is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology. His innovative methods have paved the way for advancements in device fabrication.

Latest Patents

Chung-Feng Nieh holds a patent for a "Method for fabricating a semiconductor device." This method involves forming a fin on a semiconductor substrate and creating a sacrificial gate electrode structure. The process includes the implantation of fluorine into gate sidewall spacers, enhancing the performance of the semiconductor device.

Career Highlights

Nieh is associated with Taiwan Semiconductor Manufacturing Company Limited, a leader in the semiconductor industry. His work has been instrumental in developing cutting-edge technologies that drive the industry forward. With a focus on innovation, he continues to contribute to the advancement of semiconductor fabrication techniques.

Collaborations

Chung-Feng Nieh has collaborated with notable colleagues such as Tsan-Chun Wang and Chiao-Ting Tai. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Chung-Feng Nieh's contributions to semiconductor technology exemplify the spirit of innovation. His patent and collaborative efforts highlight the importance of teamwork in advancing the field. His work continues to influence the future of semiconductor device fabrication.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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