Chun Wai Ng

Title: The Innovations of Chun Wai Ng

Introduction

Chun Wai Ng is a notable inventor based in Hong Kong, CN. He has made significant contributions to the field of power semiconductor devices, holding a total of 3 patents. His work focuses on enhancing the efficiency and functionality of semiconductor technologies.

Latest Patents

Chun Wai Ng's latest patents include a "Field plate structure for power semiconductor device and manufacturing method thereof." This invention provides a structure and a manufacturing method for a power semiconductor device, featuring thin semi-insulating field plates located between metal electrodes at the surface of the device. These field plates are formed by depositing materials before metallization and annealing after the metallization process. This innovation can be utilized in both lateral and vertical power semiconductor devices. Another significant patent is the "Split gate power semiconductor field effect transistor." This invention relates to the structure and manufacturing of a power field effect transistor (FET), providing a planar power metal oxide semiconductor field effect transistor (MOSFET) structure and an insulated gate bipolar transistor (IGBT) structure that includes a split gate and a semi-insulating field plate.

Career Highlights

Throughout his career, Chun Wai Ng has worked with various companies, including Zhong Shan Honson Electronic Technologies Limited. His expertise in semiconductor technology has positioned him as a key player in the industry.

Collaborations

Chun Wai Ng has collaborated with notable individuals such as Johnny Kin On Sin and Jiajin Liang, who have contributed to his projects and innovations.

Conclusion

Chun Wai Ng's contributions to the field of power semiconductor devices demonstrate his innovative spirit and commitment to advancing technology. His patents reflect a deep understanding of semiconductor structures and manufacturing methods, making him a significant figure in the industry.