The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2020
Filed:
Nov. 26, 2014
Applicants:
Chun Wai NG, Hong Kong, CN;
Iftikhar Ahmed, Hong Kong, CN;
Johnny Kin on Sin, Hong Kong, CN;
Inventors:
Assignee:
Other;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 29/78 (2006.01); H01L 29/739 (2006.01); H01L 29/06 (2006.01); H01L 29/732 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01); H01L 29/861 (2006.01); H01L 21/285 (2006.01); H01L 29/73 (2006.01); H01L 29/74 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/405 (2013.01); H01L 21/2855 (2013.01); H01L 21/28525 (2013.01); H01L 21/28556 (2013.01); H01L 21/28568 (2013.01); H01L 29/0619 (2013.01); H01L 29/404 (2013.01); H01L 29/456 (2013.01); H01L 29/66136 (2013.01); H01L 29/73 (2013.01); H01L 29/732 (2013.01); H01L 29/7393 (2013.01); H01L 29/7395 (2013.01); H01L 29/74 (2013.01); H01L 29/7811 (2013.01); H01L 29/7816 (2013.01); H01L 29/7823 (2013.01); H01L 29/7827 (2013.01); H01L 29/8611 (2013.01); H01L 29/1095 (2013.01);
Abstract
A structure and a manufacturing method of a power semiconductor device are provided. A structure of thin semi-insulating field plates () located between metal electrodes () at the surface of the power semiconductor device is provided. The thin semi-insulating field plates () are formed by depositing before metallization and annealing after the metallization. The present invention can be used in lateral power semiconductor devices and vertical power semiconductor devices.